Real-time study of oxygen reaction on Si(100)

Abstract
The reaction of oxygen on Si(100) surfaces from 700 to 950°C has been studied in real time with about 10-μs resolution, by use of pulsed molecular-beam reactive scattering. The oxygen reaction probability is roughly proportional to the normal component of the incident ve- locity of the O2 molecule. An intermediate step between the initial adsorption of oxygen and the desorption of SiO was observed.