Passivation of the GaAs surface by an amorphous phosphorus overlayer
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10), 1127-1129
- https://doi.org/10.1063/1.95042
Abstract
We have investigated the effects of an amorphous phosphorus (P) overlayer on the intrinsic properties of the surface of n-GaAs by means of Raman and photoluminescence spectroscopy. We report a lowering of the surface barrier from 0.7 to 0.18 eV and a reduction of one order of magnitude in surface recombination velocity. These results indicate that the Fermi level is no longer pinned at midgap, but is moved closer to the conduction band. A model is proposed in which the P atoms at the interface reduce the number of As-missing lattice defects that pin the Fermi level at midgap in n-GaAs.Keywords
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