Reduction of GaAs surface recombination velocity by chemical treatment
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1), 76-79
- https://doi.org/10.1063/1.91280
Abstract
Chemisorbed ruthenium ions on the surface of n‐GaAs decrease the surface recombination velocity of electrons and holes from 5×105 to 3.5×104 cm/sec. It is shown that the ions, in a one‐third monolayer thickness, are confined to the surface and do not form a new junction by diffusing into the GaAs. This use of Ru appears to be the first observation of the reduction of the surface recombination velocity for GaAs by the simple chemisorption of ions.Keywords
This publication has 11 references indexed in Scilit:
- Effects of Cations on the Performance of the Photoanode in the n ‐ GaAs | K 2Se ‐ K 2Se2 ‐ KOH | C Semiconductor Liquid Junction Solar CellJournal of the Electrochemical Society, 1979
- Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free-carrier gratingsApplied Physics Letters, 1978
- Enhanced photoelectrochemical solar-energy conversion by gallium arsenide surface modificationApplied Physics Letters, 1978
- Interfacial recombination in GaAlAs–GaAs heterostructuresJournal of Vacuum Science and Technology, 1978
- Interfacial recombination velocity in GaAlAs/GaAs heterostructuresApplied Physics Letters, 1978
- AlGaAs DH pump laser for photoluminescence lifetime measurementsReview of Scientific Instruments, 1978
- Degradation of photoluminescence intensity caused by excitation-enhanced oxidation of GaAs surfacesApplied Physics Letters, 1977
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- A Photon Counting Apparatus for Kinetic and Spectral MeasurementsReview of Scientific Instruments, 1972