Spin-flip scattering in ZnTe—theoretical
- 15 January 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (2), 932-941
- https://doi.org/10.1103/physrevb.15.932
Abstract
The valence-band energy levels of ZnTe in a magnetic field are computed using the Luttinger-Kohn formalism for zinc-blende semiconductors and experimental valence-band parameters obtained from cyclotron resonance. The results are used to obtain gyromagnetic ratios ( values) for light and heavy holes and applied to spin-flip scattering of laser light in the ZnTe valence band. The two shallowest-heavy-hole values are found to be and in spherical approximation. The shallowest-light-hole value is found to be in spherical approximation. Calculations are also presented for the magnetic field in the [111] crystallographic direction, and the magnetic field in the () plane. The effects of scattering from holes with finite momenta along the magnetic field are also considered. The value of the shallowest-heavy-hole level is compatible with experiment.
Keywords
This publication has 13 references indexed in Scilit:
- Spin-flip scattering in ZnTe—experimentalPhysical Review B, 1977
- Cyclotron resonance from thermally excited holes in ZnTeSolid State Communications, 1968
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Raman Scattering by Carriers in Landau LevelsPhysical Review B, 1966
- Interband Magneto-Absorption and Faraday Rotation in InSbPhysical Review B, 1966
- Theory of the Valence Band Structure of Germanium in an External Magnetic FieldPhysical Review B, 1960
- Theory of Optical Magneto-Absorption Effects in SemiconductorsPhysical Review B, 1959
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955