Determination of the atomic structure of the epitaxial:Si(111) interface using high-resolution Rutherford backscattering
- 15 April 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (11), 6305-6310
- https://doi.org/10.1103/physrevb.37.6305
Abstract
High-resolution Rutherford backscattering is employed to study the atomic structure at the epitaxial :Si(111) interface. The Si atoms of the substrate are found to bond to Co atoms in the silicide. In this bonding arrangement the interface Co atoms are fivefold, or possibly eightfold, coordinated. Bond-angle distortions are essentially absent.
Keywords
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