Numerical corrections for Hall effect measurements in silicon containing Gaussian dopant distributions

Publisher Website

1 July 1970

journal article
Published by Elsevier in Solid-State Electronics

Vol. 13 (7), 951-956
https://doi.org/10.1016/0038-1101(70)90093-6

Abstract

No abstract available

Keywords

HALL EFFECT

This publication has 6 references indexed in Scilit:

EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATION
Applied Physics Letters, 1969
On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique
IBM Journal of Research and Development, 1968
Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ions
Canadian Journal of Physics, 1968
ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS
Canadian Journal of Physics, 1967
Carrier mobilities in silicon empirically related to doping and field
Proceedings of the IEEE, 1967
Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
Physical Review B, 1958

Cited by 1 article