Target temperature dependence of sheet resistivity and structure of Ar-implanted diamonds
- 1 May 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 32 (1-4), 145-149
- https://doi.org/10.1016/0168-583x(88)90198-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electrical properties of Ti and Cr ion implanted diamonds dependent on target temperatureNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Electrical conductivity of nitrogen and argon implanted diamondNuclear Instruments and Methods in Physics Research, 1983
- Raman scattering from ion-implanted graphitePhysical Review B, 1981
- A percolation theory approach to the implantation induced diamond to amorphous-carbon transitionRadiation Effects, 1980