Thin-film analysis using Rutherford scattering
- 21 March 1974
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 7 (5), 653-662
- https://doi.org/10.1088/0022-3727/7/5/301
Abstract
The technique of Rutherford scattering of MeV α-particles has been used to study the stoichiometry and impurity content of a number of thin-film structures which exhibit electroforming and switching effects. The materials studied, SiOx, Cu2O, CaF2, and CdS, enable the advantages and limitations of the technique to be studied.Keywords
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