Optical properties of reactively sputtered a-SiHx films
- 29 February 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 481-486
- https://doi.org/10.1016/0022-3093(80)90641-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Importance of argon pressure in the preparation of rf-sputtered amorphous silicon–hydrogen alloysJournal of Vacuum Science and Technology, 1979
- Optical properties and structure of amorphous silicon films prepared by CVDSolar Energy Materials, 1979
- Defects in plasma-deposited a-Si: HJournal of Non-Crystalline Solids, 1979
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layersPhysical Review B, 1977
- New precision technique for measuring the concentration versus depth of hydrogen in solidsApplied Physics Letters, 1976
- Refractive-Index Behavior of Amorphous Semiconductors and GlassesPhysical Review B, 1973
- Behavior of the Electronic Dielectric Constant in Covalent and Ionic MaterialsPhysical Review B, 1971