Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers
- 15 May 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (10), 4817-4821
- https://doi.org/10.1103/physrevb.15.4817
Abstract
A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.Keywords
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