Noise performance of gallium arsenide field-effect transistors
- 1 April 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 11 (2), 243-255
- https://doi.org/10.1109/jssc.1976.1050711
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Design and Performance of X-Band Oscillators with GaAs Schottky-Gate Field-Effect TransistorsIEEE Transactions on Microwave Theory and Techniques, 1975
- Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed ModulatorsIEEE Transactions on Microwave Theory and Techniques, 1975
- Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHzElectronics Letters, 1975
- Experiments on integrated gallium-arsenide f.e.t. oscillators at X bandElectronics Letters, 1975
- Integrated GaAs f.e.t. mixer performance at X bandElectronics Letters, 1975
- Design and Performance of Microwave Amplifiers with GaAs Schottky-Gate Field-Effect TransistorsIEEE Transactions on Microwave Theory and Techniques, 1974
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969
- Equivalence of the noise figures of common-source and common-gate f.e.t. circuitsElectronics Letters, 1969
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967