Dielectric Activity and Ferroelectricity in Piezoelectric Semiconductor Li-Doped ZnO
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9S), 5160
- https://doi.org/10.1143/jjap.35.5160
Abstract
Temperature dependences of dielectric constants, specific heat and D–E hysteresis loops of Li-doped zinc oxide ceramics were investigated. A new dielectric anomaly was found at 330 K in Zn1-xLixO with x=0.17. A cusp-like anomaly was also found in specific heat. A ferroelectric D–E hysteresis loop was successfully observed for the first time. These observations suggest that replacement of host Zn ions by small Li ions induces a ferroelectric phase in the wurtzite-type ZnO piezoelectric semiconductor. This material is a candidate for ferroelectric thin films in integrated ferroelectric devices.Keywords
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