Power GaAs MESFET: Reliability aspects and failure mechanisms
- 1 January 1984
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 24 (5), 947-955
- https://doi.org/10.1016/0026-2714(84)90025-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Metallurgical behaviour of Ni/AuGe ohmic contacts to GaAsSolid State Communications, 1984
- Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contactsSolid-State Electronics, 1983
- The characteristics of AuGe-based ohmic contacts to n-GaAs including the effects of agingSolid-State Electronics, 1983
- Influence of the surface and the episubstrate interface on the drain current drift of GaAs MESFET'sIEEE Transactions on Electron Devices, 1981
- Studies of the Ti-W/Au metallization on aluminumThin Solid Films, 1978
- Diffusion barriers in thin filmsThin Solid Films, 1978