Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts
- 30 June 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (6), 559-564
- https://doi.org/10.1016/0038-1101(83)90171-5
Abstract
No abstract availableKeywords
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