GaAs growth properties on V-grooved Si substrates
- 13 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (11), 998-1000
- https://doi.org/10.1063/1.100761
Abstract
GaAs growth properties and first successful maskless selective growth on the etched groove Si substrates are reported. No crystal growth occurs on the {111} Si sidewalls of the V grooves, and the GaAs layers grow only on the {100} planes. The cross‐sectional shapes of the selective grown layer depend on the direction of the V grooves. The selectivity also remains even in Al0.3Ga0.7As‐grown layers. The selective growth mechanisms are discussed.Keywords
This publication has 15 references indexed in Scilit:
- AlGaAs heterojunction visible (700 nm) light-emitting diodes on Si substrates fabricated by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1985
- Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuitsApplied Physics Letters, 1985
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxyApplied Physics Letters, 1985
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVDJapanese Journal of Applied Physics, 1985
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- GaAs Shallow-homojunction solar cells on Ge-coated Si substratesIEEE Electron Device Letters, 1981