AlGaAs heterojunction visible (700 nm) light-emitting diodes on Si substrates fabricated by metalorganic chemical vapor deposition
- 9 June 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23), 1617-1619
- https://doi.org/10.1063/1.96835
Abstract
AlGaAs visible surface light-emitting diodes (LED’s) on silicon substrates have been successfully fabricated by use of the metalorganic chemical vapor deposition technique. The emission spectrum of the LED peaked at 700 nm with a half-width of 45 nm at the forward current of 100 mA at room temperature. The external efficiency was 0.3%.Keywords
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