Interdiffusion of GaAs/Ga1−xInxAs quantum wells
- 15 June 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (12), 8653-8655
- https://doi.org/10.1063/1.353376
Abstract
We report results of an investigation of interdiffusion in GaAs/Ga0.82In0.18As strained single quantum wells. Wells of width 12–100 Å, grown by organometallic vapor phase epitaxy, were subjected to 10 s rapid thermal anneals of 830–950 °C, and shifts in the electron‐to‐heavy‐hole transition energies were detected by 4 K photoluminescence. We employed a powerful computer model to relate postdiffusion well shape to changes in photoluminescence energies, enabling estimation of diffusivity. Interdiffusion rates of 1×10−16–2×10−14 cm2/s and activation energies of 3.1–3.8 eV were obtained.Keywords
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