New class of gain guiding laser with a tapered-stripe structure
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8), 4302-4304
- https://doi.org/10.1063/1.332664
Abstract
A new class of gain guiding laser with a tapered-stripe structure has been developed which exhibits a linear dependence of light output on cw current, a stable single-lobe far-field pattern along the junction at the power level of more than 10 mW, and an amount of astigmatism below 20 μm. It is also shown that a thin active layer thickness is desirable to achieve a stable lateral mode. The main feature of the tapered-stripe structure is that it offers an additional degree of freedom in controlling the beam spot size and the radius of curvature of the phase front separately, by varying the widths as well as the length of the tapered stripe.Keywords
This publication has 11 references indexed in Scilit:
- Astigmatism and spontaneous emission factor of laser diodes with parabolic gainJournal of Applied Physics, 1983
- Longitudinal mode spectra of diode lasersApplied Physics Letters, 1982
- Waveguiding in oxide-isolated stripe-geometry diode lasersJournal of Applied Physics, 1982
- Spectral dependence of the change in refractive index due to carrier injection in GaAs lasersJournal of Applied Physics, 1981
- Planar stripe with waist and/or notch (SWAN) injection laserIEEE Journal of Quantum Electronics, 1980
- Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguidingIEEE Journal of Quantum Electronics, 1979
- Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operationIEEE Journal of Quantum Electronics, 1977
- Waveguiding in a stripe-geometry junction laserIEEE Journal of Quantum Electronics, 1977
- Gain−induced guiding and astigmatic output beam of GaAs lasersJournal of Applied Physics, 1975
- A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier densityOptical and Quantum Electronics, 1972