Origin of oval defects in GaAs layers grown by molecular beam epitaxy
- 1 October 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 73 (1), 117-122
- https://doi.org/10.1016/0022-0248(85)90337-9
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
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