The transient response of quasi-two-dimensional semiconductors under hot electron conditions
- 1 May 1978
- journal article
- Published by Elsevier in Surface Science
- Vol. 73, 147-155
- https://doi.org/10.1016/0039-6028(78)90482-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Microwave hot electron effects in semiconductor quantized inversion layersSolid-State Electronics, 1977
- Hot-electron effects in silicon quantized inversion layersPhysical Review B, 1976
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976
- Infrared magneto-transmittance of a two-dimensional electron gasSurface Science, 1976
- Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET: I. Bulk phonon treatmentSurface Science, 1974
- Hot carriers in silicon surface inversion layersJournal of Applied Physics, 1974
- Quantum properties of surface space-charge layersC R C Critical Reviews in Solid State Sciences, 1973
- Fundamental limitations in microelectronics—I. MOS technologySolid-State Electronics, 1972
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967