Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET: I. Bulk phonon treatment
- 30 November 1974
- journal article
- Published by Elsevier in Surface Science
- Vol. 46 (1), 197-231
- https://doi.org/10.1016/0039-6028(74)90249-0
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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