The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors
- 15 January 1980
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 168 (1-3), 283-288
- https://doi.org/10.1016/0029-554x(80)91266-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Damaged regions in neutron-irradiated and ion-bombarded Ge and SiRadiation Effects, 1971