n–Vocdiagram and the physics of native interfacial layer of the Schottky barrier
- 1 May 1988
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 37 (5), 790-794
- https://doi.org/10.1088/0031-8949/37/5/023
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- diagram as a useful method of investigating the interfacial layer effects in schottky barrier solar cells: The example of Cu/Cu2O photovoltaic junctionsSolar Cells, 1986
- Enhancement of the photovoltaic conversion efficiency in Cu/Cu2O schottky barrier solar cells by H+ ion irradiationPhysica Status Solidi (a), 1986
- The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu2O schottky barrier solar cellsRadiation Effects, 1983
- Explanation for low-efficiency Cu2O Schottky-barrier solar cellsApplied Physics Letters, 1979
- Photovoltaic properties of MIS-Schottky barriersSolid-State Electronics, 1977
- MIS-Schottky theory under conditions of optical carrier generation in solar cellsApplied Physics Letters, 1976
- Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cellsApplied Physics Letters, 1976
- Some Rationale for the Unusual Behavior of the Dielectric Constant of Cu2OCanadian Journal of Physics, 1973
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965