Thermal redistribution of oxygen during solid-phase regrowth of arsenic-implanted amorphized Si
- 1 September 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (5), 413-415
- https://doi.org/10.1063/1.92756
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Low-temperature redistribution and gettering of oxygen in siliconJournal of Applied Physics, 1981
- Gettering of mobile oxygen and defect stability within back-surface damage regions in SiApplied Physics Letters, 1981
- Redistribution of implanted oxygen and carbon in siliconJournal of Applied Physics, 1980
- Laser irradiation of furnace preannealed (111) ion implanted siliconApplied Physics Letters, 1980
- An electron microscopy study of defect structures in recrystallized amorphous layers of self-ion-irradiated ?111? siliconPhilosophical Magazine A, 1978