Redistribution of implanted oxygen and carbon in silicon

Abstract

This paper reports new experimental results on the measurements of oxygen and carbon in silicon. ¹⁸O and ¹³C in‐depth distribution has been measured in silicon as a function of postimplant furnace and laser annealing using secondary ion mass spectroscopy. Analysis shows that a complicated structure appears in the ¹⁸O atomic profile following 900–1100 °C furnace annealing. The ¹⁸O redistribution is substantially caused by implantation‐induced damage gettering of ¹⁸O in silicon. Because of a fast annihilation of displacement damages by laser annealing, any complicated redistribution was not observed in the laser‐annealed ¹⁸O atomic profile. No such structure was observed in the furnace‐ and laser‐annealed ¹³C atomic profiles, implying some differences in the atomic behavior of carbon and oxygen in silicon.