Temperature Dependence of Photo-Hall Effects in High-Resistivity Gallium Arsenide. I. One-Carrier Effects

Abstract

The new opportunities for investigating imperfections in high-resistivity photoconductors through temperature-dependent photo-Hall effects have been utilized for a number of problems in gallium arsenide crystals in which one-carrier conductivity dominates. Such problems include (1) the type of trapping centers in "pure" GaAs, (2) the identity of the carriers in "pure" crystals which exhibit an exponentially increasing photosensitivity with increasing reciprocal temperature, and (3) the nature of variations of Hall mobility with photoexcitation, indicating strong scattering effects.