Vibrational Spectrum and Order of Laser-Quenched Amorphous Silicon
- 15 October 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (16), 1571-1573
- https://doi.org/10.1103/physrevlett.53.1571
Abstract
The first physical-property measurements on laser-quenched amorphous Si are reported. The form of the vibrational spectrum and degree of structural order have been obtained by depolarized-Raman-scattering measurements. A thin layer prepared by 700-psec pulses of 3567-Å radiation is found to have a bond-angle variation equal to, but no greater than, that achieved in vapor-deposited pure amorphous Si. The results suggest a maximum allowed order that may be achieved in amorphous Si.Keywords
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