Construction and performance of epitaxial transferred electron oscillators
- 28 February 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (2), 137-144
- https://doi.org/10.1016/0038-1101(67)90031-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A simple analysis of stable domain propagation in the Gunn effectBritish Journal of Applied Physics, 1966
- Noise performance of Gunn microwave generators in X and J bandElectronics Letters, 1966
- Amplitude and frequency modulation of transferred electron microwave generatorsIEEE Transactions on Electron Devices, 1966
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- C.W. X and K band radiation from GaAs epitaxial layersElectronics Letters, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961