Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal Silicon
Open Access
- 15 April 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 5 (8), 3111-3119
- https://doi.org/10.1103/physrevb.5.3111
Abstract
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to a more complex beryllium configuration than the 191-meV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two new acceptor levels at 106 and 81 meV. Quenching and annealing studies indicate that these new levels are due to lithium forming a complex with the defects responsible for the 191- and 145- meV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-meV beryllium-lithium level is split into two levels, presumably by internal strains. Tentative models are proposed to explain these results.Keywords
This publication has 9 references indexed in Scilit:
- Influence of Hydrostatic Pressure and Temperature on the Deep Donor Levels of Sulfur in SiliconPhysical Review B, 1970
- Beryllium as an Acceptor in SiliconJournal of the Electrochemical Society, 1970
- Thermal ionization energy of lithium and lithium-oxygen complexes in single-crystal siliconJournal of Physics and Chemistry of Solids, 1969
- Beryllium as an acceptor in siliconSolid State Communications, 1968
- Spectroscopic Investigation of Group-III Acceptor States in SiliconPhysical Review B, 1967
- Magnesium as a donor impurity in siliconSolid State Communications, 1967
- Excitation Spectra of Lithium Donors in Silicon and GermaniumPhysical Review B, 1965
- Absorption Spectra and Zeeman Effect of Copper and Zinc Impurities in GermaniumPhysical Review Letters, 1960
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954