Thermal ionization energy of lithium and lithium-oxygen complexes in single-crystal silicon
- 1 August 1969
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 30 (8), 2037-2043
- https://doi.org/10.1016/0022-3697(69)90182-6
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Optical Determination of the Symmetry of the Ground States of Group-V Donors in SiliconPhysical Review B, 1965
- An optical study of lithium and lithiumoxygen complexes as donor impurities in siliconJournal of Physics and Chemistry of Solids, 1965
- Excitation Spectra of Lithium Donors in Silicon and GermaniumPhysical Review B, 1965
- Ground State Energies of Donors in Ge and SiJournal of the Physics Society Japan, 1961
- Hall Effect and Impurity Levels in Phosphorus-Doped SiliconPhysical Review B, 1959
- Ionized-Impurity Scattering Mobility of Electrons in SiliconPhysical Review B, 1959
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Theory of Donor States in SiliconPhysical Review B, 1955
- Electrical Properties of-Type GermaniumPhysical Review B, 1954