Analysis of boron predeposited silicon wafers by combined ion beam techniques and X-ray microanalysis
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1), 653-658
- https://doi.org/10.1016/0029-554x(78)90945-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Energy levels of light nuclei A = 13–15Nuclear Physics A, 1976
- Analysis of surface layers by the channeling technique: Beam energy dependenceApplied Physics Letters, 1975
- Photon cross sections from 0.1 keV to 1 MeV for elements Z = 1 to Z = 94Atomic Data and Nuclear Data Tables, 1973
- Interface Reactions of B[sub 2]O[sub 3]-Si System and Boron Diffusion into SiliconJournal of the Electrochemical Society, 1973
- Solid Solubility and Diffusion Coefficients of Boron in SiliconJournal of the Electrochemical Society, 1969