Low-temperature epitaxial regrowth of ion-implanted amorphous GaAs
- 15 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (12), 994-996
- https://doi.org/10.1063/1.91656
Abstract
Glancing‐angle Rutherford backscattering and channeling techniques have been used to investigate the regrowth of Ar+‐ion‐implanted amorphous layers on (100) GaAs. Under carefully controlled implant conditions, amorphous GaAs layers can be recrystallized epitaxially at temperatures below 250 °C. However, the regrowth process is complex, with the crystalline quality and regrowth rate most dependent on implant dose.Keywords
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