Reordering of implanted amorphous layers in gaas
- 1 January 1977
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 33 (2), 85-89
- https://doi.org/10.1080/00337577708237472
Abstract
Channeling measurements have been utilized to investigate the reordering of amorphous layers produced by implantation of 100 keV Zn or 400 keV Se ions at a dose of 3 × 1013 ions/cm2 into GaAs substrates at LN2 temperatures. Annealing was carried out at temperatures between 200 and 600°C for , and oriented substrates. From the results of annealing experiments we conclude that reordering of amorphous layers is not a simple epitaxial regrowth process as is found for implanted Si and Ge. Analysis with X-ray diffraction and TEM techniques show that the reordered layer is epitaxial on the underlying substrate but appreciable disorder in the form of sub-structure is present.Keywords
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