GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates
- 1 October 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (10), 304-306
- https://doi.org/10.1109/68.43356
Abstract
Measurements of GaAs-AlGaAs multiple-quantum-well (MQW) reflection modulators grown simultaneously on GaAs and silicon substrates are presented. Comparable electroabsorption is observed, with contrast ratios of about 4:1 for both modulators at 20 V. The absorption spectrum of the GaAs-on-Si quantum well shows a single exciton peak, which leads to certain improvements in modulator performance. This study is very encouraging for the growth of GaAs MQW modulators on silicon integrated circuit chips for off-chip communication.Keywords
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