The occurrence of cross hatch during GaAs homoepitaxy
- 15 December 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (12), 4165-4168
- https://doi.org/10.1063/1.337500
Abstract
We report on the observation of a morphological defect structure, ‘‘cross‐hatch’’ and the experimental circumstances that lead to its occurence during GaAs homoepitaxy. Photoluminescence, x‐ray diffraction and transmission electron miscroscopy (TEM) results obtained on cross‐hatched samples are presented and discussed in regards to the nature and origin of the defect structure.Keywords
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