X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates in i n s i t u heating
- 1 February 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (3), 293-295
- https://doi.org/10.1063/1.93884
Abstract
A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X‐ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As+5. Upon heating to low temperatures (+5 oxidizes the substrate to form Ga2O3 and elemental As (As0), and the As+5 is reduced to As+3 in the process. At higher temperatures (500 °C), the As+3 and As0 desorb, while the Ga+3 begins desorbing at ∼600 °C.Keywords
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