Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications
- 1 September 2000
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 131 (1-3), 79-83
- https://doi.org/10.1016/s0257-8972(00)00763-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effect of addition of niobium oxide on the thermal conductivity of aluminaJournal of the European Ceramic Society, 1998
- A Rheo-Optical Study on Polystyrene under Large Tensile Deformation around the Glass Transition TemperatureMacromolecules, 1998
- Reply to the letter by Mosca et al.Endoscopy, 1998
- Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2OJournal of Vacuum Science & Technology A, 1997
- Al3O3 thin film growth on Si(100) using binary reaction sequence chemistryThin Solid Films, 1997
- Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistryApplied Surface Science, 1996
- Comparative Study of Al2O3 Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH3)3/N2O and Al(CH3)3/H2O2Japanese Journal of Applied Physics, 1993
- Properties of aluminium oxide films prepared by plasma-enhanced metal-organic chemical vapour depositionThin Solid Films, 1990
- Radiation resistance of Al2O3MOS devicesIEEE Transactions on Electron Devices, 1969
- Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum AlkoxideJournal of the Electrochemical Society, 1967