MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxides
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (4), 179-181
- https://doi.org/10.1109/55.215158
Abstract
The technique of NH/sub 3/ nitridation of N/sub 2/O oxides is proposed and demonstrated for increasing nitrogen concentration in N/sub 2/O oxides so as to improve the resistance to boron penetration, without any adverse effects on electrical and reliability properties. Results show that NH/sub 3/-nitrided N/sub 2/O oxides exhibit excellent electrical (low fixed charge) and reliability (smaller charge trapping and suppressed interface state generation) properties, with an additional advantage of significantly improved resistance to boron generation. This technique may have a great impact on deep-submicrometer dual-gate CMOS technology.Keywords
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