Raman Scattering from Localized Vibrational Modes in GaP

Abstract
High-frequency localized vibrational modes of impurities in a III-V compound have been observed by Raman scattering. Three lines from the GaP samples closely correspond to some local modes previously reported in infrared studies, and depolarization measurements tend to confirm their proposed assignments. We describe several attractive features of this method for the study of semiconductor impurities.

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