SITE TRANSFER OF Si IN GaAs
- 1 January 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (1), 5-7
- https://doi.org/10.1063/1.1651837
Abstract
Experimental evidence is presented which (1) allows quantitative determination of the redistribution of Si impurities between Ga and As sites after Li diffusion; (2) shows there is no loss of Si to complex or pair formation when NSi ∼ 1−2 × 1018 cm−3; and (3) indicates that the site symmetry of the Si is tetrahedral before and after redistribution.Keywords
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