FORMATION OF EPITAXIAL β-SiC FILMS ON SAPPHIRE
- 15 December 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (12), 410-414
- https://doi.org/10.1063/1.1652881
Abstract
Epitaxial β‐SiC films have been formed on sapphire by chemical conversion of thin single‐crystal Si‐on‐sapphire films. The conversion is obtained by reaction of C2H2 with Si within the temperature range 900–1200°C. It is observed that epitaxy persists up to a certain depth, beyond which film orientation degenerates. The growth morphology of the β‐SiC films appears to be related to surface granularity of the Si films and differs from that observed for conversion of bulk Si.Keywords
This publication has 4 references indexed in Scilit:
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