Magnetic-field-induced localization in InSb andHg0.79Cd0.21Te

Abstract

Transport measurements on n-type InSb are reported which display novel effects similar to those recently reported for ${\mathrm{Hg}}_{0.79}$ ${\mathrm{Cd}}_{0.21}$Te near the magnetic-field-induced metal-insulator transition. We observe anisotropic temperature dependence of the longitudinal and transverse resistances at low fields, followed by an anomalous behavior of the transverse and Hall resistances below the localization field. The data for the two systems are compared, and the universality of the effects is discussed.