Galvanomagnetic Properties of n-Type InSb at Low Temperatures. I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic Fields
- 1 February 1977
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 42 (2), 542-551
- https://doi.org/10.1143/jpsj.42.542
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Electrical conduction in heavily doped germaniumPhilosophical Magazine, 1972
- Influence of the deformation potential on the mobility in n-type InSbSolid State Communications, 1971
- Conduction-Band Tailing in n-Type InSbJournal of the Physics Society Japan, 1971
- Quantitative study of the effect of compensation on impurity conduction in heavily doped n-type germaniumJournal of Non-Crystalline Solids, 1970
- Low temperature non-ohmic transport in InSbSolid State Communications, 1969
- Donor ionisation energy in n-InSb in a weak magnetic fieldSolid State Communications, 1969
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Non-Ohmic Properties in n-Type InSbJournal of the Physics Society Japan, 1967
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958