A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy
- 8 March 2000
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 15 (4), 349-356
- https://doi.org/10.1088/0268-1242/15/4/308
Abstract
The spatial distributions of the Schottky barrier heights of ultrathin CoSi2 films (~10 nm) on n-Si(100), obtained by multilayer solid state reaction of Co/Ti/n-Si, Co/a-Si/Ti/n-Si, Ti/Co/a-Si/Ti/n-Si and Co/n-Si systems, are studied by ballistic electron emission microscopy (BEEM) and spectroscopy (BEES) at low temperature (~-80 °C). The barrier heights determined from BEEM spectra range between 520 meV and 700 meV, with an approximate Gaussian distribution. The mean barrier heights of the epitaxial CoSi2 /Si contacts are 0.60-0.61 eV, lower than the 0.64 eV for polycrystalline CoSi2 /Si contacts. Adding a thin amorphous Si interlayer (1 nm) slightly increases the probability of higher barrier heights, while a thin Ti capping layer (1 nm) has no significant influence on the mean barrier height. The BEEM results are compared to those from I -V /C -V measurements.Keywords
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