Effect of growth orientation and surface roughness on electron transport in silicon nanowires
- 14 March 2007
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 75 (12), 125417
- https://doi.org/10.1103/physrevb.75.125417
Abstract
We report a study of the effect of growth orientation and surface roughness on electron transport in small-diameter hydrogen passivated silicon nanowires (NWs). We employ a nonequilibrium Green’s function technique within an sp3d5s* tight-binding approximation to show that band structure strongly affects current-voltage characteristics of ideal NWs, leading to current falloff at high drain bias for certain growth orientations. Surface roughness suppresses small bias conductance and current, and leads to a nonmonotonic dependence on gate bias. We also find that surface roughness results in a decrease of current with the length of a NW. The rate of the decrease depends on the growth directions and diameter. As the diameter of a NW becomes smaller, a transition of electron transport to Anderson localization regime may occur even at room temperature.Keywords
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