InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
- 1 July 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (7B), L839
- https://doi.org/10.1143/jjap.37.l839
Abstract
No abstract availableKeywords
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