Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
- 31 January 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 193 (3), 569-578
- https://doi.org/10.1016/0039-6028(88)90454-2
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Intermixing at InAs/GaAs and GaAs/InAs interfacesSurface Science, 1987
- Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxyApplied Physics Letters, 1986
- Doping by Secondary ImplantationJournal of the Electrochemical Society, 1986
- Symmetric arsenic dimers on the Si(100) surfacePhysical Review Letters, 1986
- Arsenic-terminated Ge(111): An ideal 1×1 surfacePhysical Review Letters, 1985
- Summary Abstract: The influence of surface reconstruction on the initial stages of silicon molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstructionApplied Physics Letters, 1984
- The use of pulsed laser irradiation in silicon molecular beam epitaxy: A comparative low energy electron diffraction studyJournal of Vacuum Science & Technology B, 1983
- Kinetics of Antimony Doping in Silicon Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1983
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975