Scanning Tunneling Microscopy/Spectroscopy Study of Self-Organized Quantum Dot Structures Formed in GaP/InP Short-Period Superlattices
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6S), 3818
- https://doi.org/10.1143/jjap.36.3818
Abstract
Self-organized quantum dot (QD) structures formed in (GaP) n (InP) m short-period superlattices (SLs) grown on GaAs (N11) substrates by gas source MBE (molecular beam epitaxy) are studied by scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS). STM images show high density QD structures as bright areas. The dot size of these structures ranges from 15 nm to 25 nm with a dispersion of ±10% depending on the n and m of the SLs. In the STS measurement, the voltage width for dI/ dV=0 varies along the lateral direction on the sample surface. This voltage width variation corresponds to the lateral variation of the band-gap energy and of the tunneling probability by the lateral composition modulation.Keywords
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