Atomically controlled InGaAs/InP superlattices grown by gas source MEE (migration enhanced epitaxy)
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4), 194-198
- https://doi.org/10.1016/0022-0248(93)90603-t
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- Gas source MEE growth of InGaAs/InP superlatticesApplied Surface Science, 1992
- Gas source MEE (migration enhanced epitaxy) growth of InPJournal of Crystal Growth, 1991
- OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wellsJournal of Crystal Growth, 1991
- Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxyJournal of Applied Physics, 1989
- Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffractionApplied Physics Letters, 1988
- Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devicesJournal of Crystal Growth, 1987