Dielectric relaxation in thermally grown SiO2films
- 1 February 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (2), 268-275
- https://doi.org/10.1109/t-ed.1966.15679
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating LayersIBM Journal of Research and Development, 1964
- Electrochemical Phenomena in Thin Films of Silicon Dioxide on SiliconIBM Journal of Research and Development, 1964
- Ag Ion Migration in α QuartzJournal of Applied Physics, 1964
- Dielectric Properties and DC Conductivity of Vacuum-Deposited SiO FilmsJapanese Journal of Applied Physics, 1964
- Nondestructive Determination of Thickness and Refractive Index of Transparent FilmsIBM Journal of Research and Development, 1964
- Dielectric Relaxation Spectra of Lithium Borosilicate GlassesJournal of Applied Physics, 1958
- The Electrical Properties of GlassPublished by Springer Nature ,1957
- Dielectric Constant of Quartz as a Function of Frequency and TemperatureJournal of Applied Physics, 1955
- Polarization Effects in the Ionic Conductivity of Silver BromideThe Journal of Chemical Physics, 1954
- Optical Properties of Silicon Monoxide in the Wavelength Region from 024 to 140 Microns*Journal of the Optical Society of America, 1954